Models for the self-heating evaluation of a gallium nitride-based high electron mobility transistor

Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) Technology for High Gain and Highly Efficient Power Amplifiers

The ubiquitous network society is evolving at an accelerated pace using various mobile communication tools, especially mobile phones. The driving force behind such a rapid development of the network is the rise in requirements of various bandwidth sensitive user applications. This leads to a demand for large capacity mobile communications, with availability anytime, anywhere and with anything. ...

Physics Based Virtual Source Compact Model of Gallium-Nitride High Electron Mobility Transistors

Simulation of Gallium-Arsenide Based High Electron Mobility Transistors

We present results for hydrodynamic simulations of pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors (HEMTs) obtained by the two-dimensional device simulator MINIMOS-NT. The concise analysis of industrially relevant HEMT power devices of two different foundries for gate-lengths between lg = 140 nm and lg = 300 nm is carried out. Several aspects, including thermal and breakdown...

MOCVD growth of GaN-based high electron mobility transistor structures

Self-heating effect modeling of a carbon nanotube-based fieldeffect transistor (CNTFET)

We present the design and simulation of a single-walled carbon nanotube(SWCNT)-based field-effect transistor (FET) using Silvaco TCAD. In this paper, theself-heating effect modeling of the CNT MOSFET structure is performed and comparedwith conventional MOSFET structure having same channel length. The numericalresults are presented to show the self-heating effect on the I...